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RLD-78MD-K
Laser Diodes
AlGaAs laser diode
RLD-78MD-K
The RLD-78MD-K is a laser diode designed for minidisc, CD-R and CD-RW playback. This device has low noise at high optical output levels.
!Applications Minidisc (MD) playback CD-R/RW playback !Features 1) Optical output is high at 5 to 10mW. 2) Reduced facet reflection. 3) High precision, compact package. 4) General-purpose polarity type is available. (M type)
!External dimensions (Units : mm)
902 0.40.1
Equivalent circuit diagram
1.0Min.
5.6
+0 -0.025
Glass window Chip
M t y p e
4.4+0
(3) L.D. (1) (2) P.D.
1.20.1 2.3 6.50.5
(1.27)
1.00.1
3-0.45
(3)
(2) (1)
!Absolute maximum ratings (Ta=25C)
Parameter Output Reverse voltage Raser PIN photodiode Symbol PO VR VR(PIN) Topr Tstg Limits 10 2 30 -10~+60 -40~+85 Unit mW V V C C
Operating temperature Storage temperature
3.6
RLD-78MD-K
Laser Diodes
!Electrical and optical characteristics (Ta=25C)
Parameter Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Parallel deviation angle Perpendicular deviation angle Emission point accuracy Peak emission wavelength Signal-to-noise ratio Symbol Ith Iop Vop Im // Min. - - - 0.4 0.05 8 20 - - - 770 60 Typ. 35 45 1.9 0.55 0.15 11 37 - - - 785 - Max. 60 70 2.3 0.8 0.4 15 45 2 3 80 810 - Unit mA mA V mW/mA mA deg deg deg deg m nm dB PO=7mW f=720kHz, f=10kHz - PO=7mW PO=7mW PO=7mW 2mW I(7mW) - I(5mW) PO=7mW, VR(PIN)=15V Conditions -
//
X Y Z S/N
// and are defined as the angle within which the intensity is 50% of the peak value.
!Electrical and optical characteristics curves
10
THRESHOLD CURRENT : Ith (mA)
OPTICAL POWER : PO (mW)
8
6
-10C 0C 10C 25C 40C 60C
RELATIVE OPTICAL INTENSITY
100 90 80 70 60 50 40 30
1.0 direction // direction
0.5
4
20
2
0 10 20 30 40 50 60 70 80 OPERATING CURRENT : IF (mA)
10 -20 -10
0
10
20
30
40
50
60
70
0 -40
0 ANGLE (deg)
40
PACKAGE TEMPERATURE : TC (C)
Fig.1 Optical output vs. operating current
Fig.2 Dependence of threshold current on temperature
Fig.3 Far field pattern
10
TC=25C
RELATIVE OPTICAL INTENSITY
800
OPTICAL INTENSITY : PO (mW)
8
6
PO=5mW
WAVELENGTH : (nm)
785 790 795
PO=7mW
790
780
4
PO=3mW
770
2
0 0.05 0.1 0.15 0.2 MONITOR CURRENT : Im (mA)
775
780
760 -20 -10
0
10
20
30
40
50
60
70
WAVELENGTH : (nm)
PACKAGE TEMPERATURE : TC (C)
Fig.4 Monitor current vs. optical output
Fig.5 Dependence of emission spectrum on optical output
Fig.6 Dependence of wavelength on temperature
RLD-78MD-K
Laser Diodes
100
90
SNR (dB)
80
70
60
50 0 2 4 6 8 10
OPTICAL POWER (mW)
Fig.7 Dependence of signal to noise ratio on optical power

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